DPE (low-noise)


  • 8 nm
  • 8 nm
  • < 40 nm
  • 40°
  • 12 - 18 µm
  • n-type silicon
  • 0.01 - 0.025 Ohm*cm
  • Platinum
  • Platinum
The DPE probe consists of a silicon tip and a special structure of conductive layers, which provides a more stable electrical signal and less noise. Because of the increase in tip radius, some reduction of resolution in the topography image is possible when using DPE probes in comparison with bare silicon probes due to the increased tip radius.


DPE probes have increased coating thickness, which gives more freedom for using them in contact electrical modes. The probes provide better performance and higher contrast of electrical signals, while the ability to resolve the small surface details might be reduced. The probes can be used in electric AC modes when a study of the electric properties of a sample has higher priority. This is demonstrated in AM-FM images of a fluoroalkane layer.

Scans and application notes »

4-cantilevers serie(s)

Cantilever Resonance Frequency, kHz Force Constant, N/m
mintypicalmax mintypicalmax
11 series Cantilever A 12 15 18 0.1 0.2 0.4
Cantilever B 60 80 100 1.1 2.7 5.6
Cantilever C 115 155 200 3 7 16
Cantilever D 250 350 465 17 42 90
*The full cone angle may be less than 40° at the last 200 nm of the tip end.


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