High Resolution

DP14/HI'RES-W

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Probe



SEM image of uncoated silicon SPM probe tip

Silicon etched probe tip of the NSC series has a conical shape. Typical probe tip radius of uncoated tip 10 nm Full tip cone angle* 40° Total tip height 20..25 µm Probe material n-type silicon (phosphorus doped) Probe bulk resistivity 0.01..0.05 Ohmcm The full cone angle may be less than 40° at the last 200 nm of the tip end.

Cantilever



SEM image of Silicon cantilever and probe.		Schematic drawing of the probe chip.

Cantilever	Resonant Frequency, kHz			Spring Constant, N/m			Length l ± 5, µm	Width w ± 3, µm	Thickness t ± 0.5, µm
Cantilever	min	typ	max	min	typ	max	Length l ± 5, µm	Width w ± 3, µm	Thickness t ± 0.5, µm
14 Series	110	160	220	1.8	5.0	12.5	125	35	2.0


Probe



SEM image of the single metal extratip of the HI'RES-W probe.

HI'RES-W probes have single tungsten spikes at the very end of silicon tip. Due to the nanometer tip curvature radius, Hi'RES-W probe provides high resolution for scans less than 200 nm in size and minimum tip-sample attraction force. Typical probe tip radius 1 nm Height of extratip 100 .. 500 nm Probe material Tungsten* Total probe tip height 20..25 µm *Hi'RES-W is not conducting from the chip holder to the spike.

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