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The technique of local anodic oxidation (LAO) is used for writing
very small oxide patterns on both metallic and semiconductor surfaces.
Research groups worldwide employ this technique for the fabrication
of nanoelectronic devices, nanoelectromechanical systems, electro-optical
structures, and templates for chemical and biological self-assembly.
Modern SPM equipment allows for direct writing on the surface in
a very accurate and well-controlled manner.
The phenomenon of anodic nano-oxidation is electrochemical in nature.
The simplified mechanism is as follows. A thin water film covering
the surface under a controlled humidity of about 50% serves as an
electrolyte between the sample (anode) and the tip (cathode). The
negatively biased tip imposes an external electric field which dissociates
the water molecules, creating OH-. The field causes the OH- ions
to drift away from the tip towards the surface, where they react
with surface atoms to form an oxide layer localized beneath the
tip. The field strength decays across the growing oxide film and
the oxide growth process self terminates at/below the critical electric
field, which is on the order of 109 V/m. The growth rate
of the oxide is strongly dependent on the bias applied to the tip.
The oxide grows in both vertical directions relative to the surface
of the sample, the depth growing slightly more quickly than the
height.
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| (a)Height image. Scan size 200 nm, Z-scale is 8 nm. |
(b) Surface relief section profile along the dotted line. |
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Fig. 1a shows the AFM height image of a Ti film with ordered points
of local oxidation (the oxide islands are about 10 nm in diameter).
Fig. 1b shows the surface profile along the blue line. NSC21/Pt
probes (lever B) were used for LAO, while the height images were
obtained in tapping mode using the NSC15 probe.
LAO requires the absence of a gap between the tip and the surface,
so the tip must be able to sustain significant mechanical loads.
Probes with relatively high spring constants (5 - 50 N/m) are recommended.
Though Si probes are usually doped for technological reasons, there
is a thin native oxide layer on the surface of Si that makes the
probes non-conducting. This is the reason why probes with special
chemically inert coatings having low electromigration firmness are
used in these experiments.
When using NSC14/Pt probes for LAO, subsequent imaging of the oxidized
pattern can be performed with the same probe. However, DP15/GP might
give better resolution of the oxide islands.
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