HI’RES-W probe features the 1 nm radius of the tip thus allowing high resolution imaging of nanometer-sized objects like single molecules, ultrathin films, and porous materials in air. As the tip-sample interaction is minimized, the probe oscilation amplitude can be reduced without the risk of tip sticking to sample.

In contrast to HI’RES-C, the HI’RES-W probe has only one extratip at the end of the silicon tip. So even rough surfaces can be scanned with Hi’RES-W tips without any repeating patterns.