Typical probe tip radius
10 nm

Full tip cone angle*
40°

Tip aspect ratio
more than 3:1 (4:1 typical)

Total tip height
20..25 µm

Probe material
n-type silicon (phosphorus doped)

Probe bulk resistivity**
0.01..0.05 Ohm*cm

*The full cone angle may be less than 40° at the last 200 nm of the tip end.
**The surface of Silicon has a native oxide layer that makes the probe nonconducting. The thickness of the native oxide film is 1..4 nm.